Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 1.05Ohm
Subcategory Other Transistors
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -1A
JESD-30 Code R-PDSO-G4
Number of Elements 1
Power Dissipation-Max 2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.05 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 70 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 1mA
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 4A
Avalanche Energy Rating (Eas) 55 mJ