Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 960mW Ta 1.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.3A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 8V
Rise Time 22 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) -4.1A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C