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SI4830CDY-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 30V 8A / 8A DUAL NCH MOSFET w/Shottky
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Inventory: 3499
Minimum: 1
Total Price: USD $0.27
Unit Price: USD $0.27075
≥1 USD $0.27075
≥10 USD $0.2223
≥100 USD $0.2147
≥500 USD $0.20805
≥1000 USD $0.2014
Technical Details
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series LITTLE FOOT?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 20MOhm
Max Power Dissipation 2.9W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4830
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 17 ns
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 12 ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 7.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 1.5494mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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