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SI9936DY,518

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 5A SOT96-1
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Inventory: 7145
Minimum: 1
Total Price: USD $0.84
Unit Price: USD $0.84455
≥1 USD $0.84455
≥10 USD $0.6935
≥100 USD $0.67165
≥500 USD $0.6498
≥1000 USD $0.62795

Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series TrenchMOS?
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form GULL WING
Base Part Number SI9936
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 900mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5A
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 30V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.05Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

RoHS Status ROHS3 Compliant

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