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IRFH7911TRPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 18-PowerVQFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 13A/28A PQFN
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Inventory: 8544
Minimum: 1
Total Price: USD $60.83
Unit Price: USD $60.8285
≥1 USD $60.8285
≥10 USD $49.9111
≥100 USD $48.3512
≥500 USD $46.7913
≥1000 USD $45.2314
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 18-PowerVQFN
Number of Pins 18
Transistor Element Material SILICON
Dimensions
Height 939.8μm
Length 5.9944mm
Width 5mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 6
ECCN Code EAR99
Resistance 8.6MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 3.4W
Terminal Position QUAD
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRFH7911PBF
JESD-30 Code R-PQFP-N6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN SOURCE
Power - Max 2.4W 3.4W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.6m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A 28A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 100A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2.35 V
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