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IRF7341GTRPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N-CH 55V 5.1A
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Inventory: 5581
Minimum: 1
Total Price: USD $1.27
Unit Price: USD $1.272333
≥1 USD $1.272333
≥10 USD $1.200319
≥100 USD $1.132379
≥500 USD $1.068284
≥1000 USD $1.007811
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Max Power Dissipation 2.4W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2.4W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 5.1A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drain to Source Voltage (Vdss) 55V
Continuous Drain Current (ID) 5.1A
JEDEC-95 Code MS-012AA
Drain-source On Resistance-Max 0.05Ohm
Pulsed Drain Current-Max (IDM) 42A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 140 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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