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IPG20N04S412ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 8TDSON
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Inventory: 1962
Minimum: 1
Total Price: USD $15.03
Unit Price: USD $15.0252
≥1 USD $15.0252
≥10 USD $12.32815
≥100 USD $11.94245
≥500 USD $11.5577
≥1000 USD $11.172

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package PG-TDSON-8-4

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, OptiMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 41W
Element Configuration Dual
Power Dissipation 41W
Turn On Delay Time 9 ns
Power - Max 41W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 12.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 15μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 2ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Input Capacitance 1.13nF
FET Feature Standard
Drain to Source Resistance 12.2mOhm
Rds On Max 12.2 mΩ

Compliance

RoHS Status ROHS3 Compliant

Dimensions

Height 1mm
Length 5.15mm
Width 6.15mm

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