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SIA912DJ-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SC-70-6 Dual
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 12V 4.5A 6.5W 40mohm @ 4.5V
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Inventory: 4036
Minimum: 1
Total Price: USD $33.18
Unit Price: USD $33.1797
≥1 USD $33.1797
≥10 USD $27.22415
≥100 USD $26.3739
≥500 USD $25.5227
≥1000 USD $24.67245
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-70-6 Dual
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 40MOhm
Max Power Dissipation 1.9W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SIA912
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 5 ns
Power - Max 6.5W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 8V
Rise Time 15ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 4.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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