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SIA917DJ-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SC-70-6 Dual
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 20V 4.5A SC70-6
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Inventory: 3544
Minimum: 1
Total Price: USD $0.68
Unit Price: USD $0.68115
≥1 USD $0.68115
≥10 USD $0.55955
≥100 USD $0.5415
≥500 USD $0.5244
≥1000 USD $0.50635
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-70-6 Dual
Number of Pins 6
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 110mOhm
Subcategory Other Transistors
Max Power Dissipation 6.5W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SIA917
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time 45ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) -4.5A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 3.3A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 10A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1 V
Alternative Model
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