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DMC3035LSD-13
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 30V 6.9A/5A 8-SOIC
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Inventory: 5763
Minimum: 1
Total Price: USD $0.19
Unit Price: USD $0.188851
≥1 USD $0.188851
≥10 USD $0.178162
≥100 USD $0.168076
≥500 USD $0.158562
≥1000 USD $0.149588
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 850.995985mg
Transistor Element Material SILICON
Dimensions
Height 1.5mm
Length 5.3mm
Width 4.1mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 6.9A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 384pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.9A 5A
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 10V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.9A
Drain-source On Resistance-Max 0.035Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 30A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
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