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IRF7303QTRPBF
Infineon TechnologiesRoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 4.9A 8-SOIC
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Inventory: 8390
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.11495
≥1 USD $0.11495
≥500 USD $0.09405
≥1000 USD $0.0912
≥2000 USD $0.08835
≥5000 USD $0.0855
≥10000 USD $0.07695
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Technical
Packaging Cut Tape (CT)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Base Part Number IRF7303QPBF
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 6.8 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 50m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 7.7 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 4.9A
Gate to Source Voltage (Vgs) 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
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