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IRF7341QTRPBF
Infineon TechnologiesRoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 55V 5.1A 8-SOIC
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Inventory: 4584
Minimum: 1
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Technical
Packaging Cut Tape (CT)
Published 2005
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 2.4W
Base Part Number IRF7341QPBF
Number of Elements 2
Power Dissipation 2.4W
Turn On Delay Time 9.2 ns
Power - Max 2.4W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.1A
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 7.7ns
Drain to Source Voltage (Vdss) 55V
Fall Time (Typ) 12.5 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 4.7A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 780pF
FET Feature Logic Level Gate
Drain to Source Resistance 65mOhm
Rds On Max 50 mΩ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
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