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SI9926BDY-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Trans MOSFET N-CH 20V 6.2A 8-Pin SOIC N T/R
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Inventory: 3694
Minimum: 1
Total Price: USD $0.17
Unit Price: USD $0.16625
≥1 USD $0.16625
≥500 USD $0.1368
≥1000 USD $0.13205
≥2000 USD $0.12825
≥5000 USD $0.1235
≥10000 USD $0.11115
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 506.605978mg
Dimensions
Height 1.5494mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 20mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.14W
Base Part Number SI9926
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Power Dissipation 1.14W
Turn On Delay Time 35 ns
Power - Max 1.14W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 20mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.2A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 50ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 8.2A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Drain to Source Resistance 20mOhm
Rds On Max 20 mΩ
Nominal Vgs 600 mV
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