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SI9934BDY-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 12V 4.8A 8-SOIC
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Inventory: 5475
Minimum: 1
Total Price: USD $1.22
Unit Price: USD $1.2236
≥1 USD $1.2236
≥10 USD $1.00415
≥100 USD $0.9728
≥500 USD $0.94145
≥1000 USD $0.9101
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 35mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI9934
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 19 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 35m Ω @ 6.4A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.8A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) -6.4A
Threshold Voltage -1.4V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 1.55mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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