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SI1972DH-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 1.3A SC70-6
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Inventory: 7418
Minimum: 1
Total Price: USD $0.21
Unit Price: USD $0.2147
≥1 USD $0.2147
≥10 USD $0.1767
≥100 USD $0.171
≥500 USD $0.1653
≥1000 USD $0.16055

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 190mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 740mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI1972
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 740mW
Turn On Delay Time 5 ns
Power - Max 1.25W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 225m Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 1.3A
Threshold Voltage 2.8V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Nominal Vgs 2.8 V

Dimensions

Height 1mm
Length 2mm
Width 1.25mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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