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SI7214DN-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? 1212-8 Dual
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET DUAL N-CH 30V (D-S) HIGH EFFICIENCY
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Inventory: 3103
Minimum: 1
Total Price: USD $0.34
Unit Price: USD $0.34105
≥1 USD $0.34105
≥10 USD $0.2793
≥100 USD $0.27075
≥500 USD $0.2622
≥1000 USD $0.25365
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8 Dual
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 40mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Max Power Dissipation 1.3W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI7214
Pin Count 8
JESD-30 Code R-XDSO-C6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 40m Ω @ 6.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.6A
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Rise Time 10 ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 6.4A
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.6A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 1.04mm
Length 3.05mm
Width 3.05mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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