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SI4933DY-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 12V 7.4A 8-SOIC
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Inventory: 4338
Minimum: 1
Total Price: USD $1.82
Unit Price: USD $1.8164
≥1 USD $1.8164
≥10 USD $1.49055
≥100 USD $1.444
≥500 USD $1.39745
≥1000 USD $1.3509
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI4933
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 35 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 9.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 500μA
Gate Charge (Qg) (Max) @ Vgs 70nC @ 4.5V
Rise Time 47ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 320 ns
Continuous Drain Current (ID) 7.4A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.014Ohm
Drain to Source Breakdown Voltage 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
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