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SI3588DV-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V 2.5A 6TSOP
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Inventory: 8894
Minimum: 1
Total Price: USD $0.86
Unit Price: USD $0.85975
≥1 USD $0.85975
≥10 USD $0.81108
≥100 USD $0.76517
≥500 USD $0.72186
≥1000 USD $0.681

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 145mOhm
Terminal Finish PURE MATTE TIN (SN)
Subcategory Other Transistors
Max Power Dissipation 830mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI3588
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 830mW
Power - Max 830mW 83mW
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 2.5A 570mA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Rise Time 29ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 29 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 3A
Threshold Voltage 450mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 450 mV

Alternative Model

DTA023JEBTL
ROHM Semiconductor

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