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BSO150N03
Infineon TechnologiesRoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
OptiMOS? Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Mosfet Array 15nC @ 5V 7.6A 1.4W 4ns
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Inventory: 8882
Minimum: 1
Total Price: USD $1.88
Unit Price: USD $1.87815
≥1 USD $1.87815
≥10 USD $1.5409
≥100 USD $1.49245
≥500 USD $1.44495
≥1000 USD $1.3965
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation 1.4W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 9.1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BSO150N03
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 9.1A, 10V
Vgs(th) (Max) @ Id 2V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Rise Time 4ns
Fall Time (Typ) 4 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 7.6A
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.015Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 100 pF
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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