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HUFA76407DK8T
ON SemiconductorRoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
UltraFET? Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Mosfet Array 11.2nC @ 10V 3.8A 2.5W 31ns
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Inventory: 4951
Minimum: 1
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 230.4mg
Transistor Element Material SILICON
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series UltraFET?
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature ULTRA-LOW RESISTANCE
Voltage - Rated DC 60V
Max Power Dissipation 2.5W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3.5A
Time@Peak Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11.2nC @ 10V
Rise Time 11ns
Fall Time (Typ) 31 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 3.8A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
No data
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