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ZXMN6A09DN8TC
Diodes IncorporatedRoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 4.3A 8SOIC
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Inventory: 5453
Minimum: 1
Total Price: USD $0.14
Unit Price: USD $0.1387
≥1 USD $0.1387
≥10 USD $0.114
≥100 USD $0.1102
≥500 USD $0.1064
≥1000 USD $0.10355
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Max Power Dissipation 1.25W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4.4A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 4.9 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1407pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 24.2nC @ 5V
Rise Time 5ns
Fall Time (Typ) 5 ns
Turn-Off Delay Time 25.3 ns
Continuous Drain Current (ID) 4.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.9A
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
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