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DMN2300UFL4-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 6-XFDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 2.11A 6DFN
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Inventory: 8666
Minimum: 1
Total Price: USD $0.25
Unit Price: USD $0.251109
≥1 USD $0.251109
≥10 USD $0.236891
≥100 USD $0.223475
≥500 USD $0.210835
≥1000 USD $0.198895
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Number of Pins 6
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2014
Series Automotive, AEC-Q101
JESD-609 Code e4
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Max Power Dissipation 530mW
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Channels 2
Power Dissipation 1.39W
Turn On Delay Time 3.5 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 195m Ω @ 300mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 128.6pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.11A Ta
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 4.5V
Rise Time 2.8ns
Fall Time (Typ) 13 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 2.11A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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