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IRFHM792TRPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 100V 2.3A 8PQFN
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Inventory: 6871
Minimum: 1
Total Price: USD $0.13
Unit Price: USD $0.134795
≥1 USD $0.134795
≥10 USD $0.127171
≥100 USD $0.11997
≥500 USD $0.113179
≥1000 USD $0.106769
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 2.3W
Base Part Number IRFHM792PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 3.4 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 195m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 251pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 10V
Rise Time 4.7ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 2.6 ns
Turn-Off Delay Time 5.2 ns
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.4A
Drain-source On Resistance-Max 0.195Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 14A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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