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IRF7503TR

Infineon Technologies
RoHS
/
Package 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description Mosfet Array 2 N-Channel (Dual) 30V 2.4A 1.25W Surface Mount Micro8?
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Inventory: 9651
Minimum: 1
Total Price: USD $0.29
Unit Price: USD $0.28595
≥1 USD $0.28595
≥10 USD $0.23465
≥100 USD $0.22705
≥500 USD $0.21945
≥1000 USD $0.2128

Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Packaging Cut Tape (CT)
Published 1997
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IRF7503
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 1.25W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 135m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.4A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 2.4A
Drain-source On Resistance-Max 0.135Ohm
Pulsed Drain Current-Max (IDM) 14A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

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