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2N7002V-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 0.28A SOT-563
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Inventory: 6749
Minimum: 1
Total Price: USD $9.9
Unit Price: USD $9.8971
≥1 USD $9.8971
≥10 USD $8.1206
≥100 USD $7.86695
≥500 USD $7.6133
≥1000 USD $7.35965
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 3.005049mg
Transistor Element Material SILICON
Dimensions
Height 600μm
Length 1.6mm
Width 1.2mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 7.5Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Max Power Dissipation 150mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 280mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 20 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 280mA
Gate to Source Voltage (Vgs) 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 5 pF
Min Breakdown Voltage 60V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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