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BSO4804
Infineon TechnologiesRoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 8A 8SOIC
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Inventory: 6213
Minimum: 1
Total Price: USD $2.96
Unit Price: USD $2.95735
≥1 USD $2.95735
≥10 USD $2.4263
≥100 USD $2.35125
≥500 USD $2.27525
≥1000 USD $2.19925
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 8A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BSO4804
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Rise Time 27ns
Fall Time (Typ) 24 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 90 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
RoHS Status RoHS Compliant
Alternative Model
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