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STS4DNF60

STMicroelectronics
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N Ch 60V 0.070 Ohm 4A
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Inventory: 3230
Minimum: 1
Total Price: USD $6.08
Unit Price: USD $6.08285
≥1 USD $6.08285
≥10 USD $4.9913
≥100 USD $4.8355
≥500 USD $4.6797
≥1000 USD $4.5239

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number STS4D
Pin Count 8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.09Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 16A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

AOB2500L
Alpha & Omega Semiconductor Inc.

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