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PSMN3R0-60ES,127
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
PSMN3R0-60ES - N-channel 60 V 3.0 mO standard level MOSFET in I2PAK.
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Inventory: 9325
Minimum: 1
Total Price: USD $7.06
Unit Price: USD $7.0585
≥1 USD $7.0585
≥10 USD $5.7912
≥100 USD $5.6107
≥500 USD $5.42925
≥1000 USD $5.24875
Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 306W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 306W
Case Connection DRAIN
Turn On Delay Time 31 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8079pF @ 30V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 77 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 824A
Avalanche Energy Rating (Eas) 800 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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