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SI9410BDY-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 6.2A 8SOIC
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Inventory: 3959
Minimum: 1
Total Price: USD $4.97
Unit Price: USD $4.9685
≥1 USD $4.9685
≥10 USD $4.07645
≥100 USD $3.94915
≥500 USD $3.82185
≥1000 USD $3.69455
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 24m Ω @ 8.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.2A Ta
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 15 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 8.1A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.2A
Drain-source On Resistance-Max 0.024Ohm
DS Breakdown Voltage-Min 30V
Nominal Vgs 1 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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