Welcome to AAA CHIPS!
  • English

SI1305DL-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SC-70, SOT-323
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 8V 0.86A SC-70-3
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 6034
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.09025
≥1 USD $0.09025
≥500 USD $0.0741
≥1000 USD $0.07125
≥2000 USD $0.06935
≥5000 USD $0.06745
≥10000 USD $0.05985

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 290mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 290mW
Turn On Delay Time 8 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 280m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 860mA Ta
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Rise Time 55ns
Fall Time (Typ) 12 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 860mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.86A
Drain-source On Resistance-Max 0.28Ohm
DS Breakdown Voltage-Min 8V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

Recommended For You