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IRFR3704ZTRPBF
Infineon TechnologiesRoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 60A DPAK
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Inventory: 5539
Minimum: 1
Total Price: USD $0.28
Unit Price: USD $0.27645
≥1 USD $0.27645
≥10 USD $0.22705
≥100 USD $0.2204
≥500 USD $0.2128
≥1000 USD $0.20615
Technical Details
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 8.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.4m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 8.9 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 4.9 ns
Continuous Drain Current (ID) 60A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0084Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 240A
Dimensions
Height 2.26mm
Length 6.7056mm
Width 6.22mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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