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Infineon TechnologiesRoHS
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Package 8-TSSOP (0.173, 4.40mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 40V 4.6A 8-TSSOP
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Inventory: 4334
Minimum: 1
Total Price: USD $0.4
Unit Price: USD $0.40375
≥1 USD $0.40375
≥10 USD $0.33155
≥100 USD $0.3211
≥500 USD $0.31065
≥1000 USD $0.3002
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-TSSOP
Dimensions
Height 1.0414mm
Length 3.0988mm
Width 4.4958mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 46MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 2
Power Dissipation-Max 1.5W Ta
Power Dissipation 1.5W
Turn On Delay Time 25 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 46mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.6A Ta
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Rise Time 360ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 190 ns
Continuous Drain Current (ID) -4.6A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Dual Supply Voltage -40V
Input Capacitance 3.15nF
Drain to Source Resistance 74mOhm
Rds On Max 46 mΩ
Nominal Vgs -3 V
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