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SI4346DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 5.9A 8-SOIC
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Inventory: 9717
Minimum: 1
Total Price: USD $0.51
Unit Price: USD $0.5054
≥1 USD $0.5054
≥10 USD $0.4142
≥100 USD $0.40185
≥500 USD $0.38855
≥1000 USD $0.37525

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.31W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.31W
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.9A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 5.9A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.023Ohm
Drain to Source Breakdown Voltage 30V

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