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SI3456BDV-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 30V 6.0A 2.0W 35mohm @ 10V
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Inventory: 4313
Minimum: 1
Total Price: USD $0.27
Unit Price: USD $0.26505
≥1 USD $0.26505
≥10 USD $0.21755
≥100 USD $0.2109
≥500 USD $0.20425
≥1000 USD $0.19665
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package 6-TSOP
Weight 19.986414mg
Dimensions
Height 1mm
Length 3.05mm
Width 1.65mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 35MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 1.1W Ta
Element Configuration Single
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Drain to Source Resistance 35mOhm
Rds On Max 35 mΩ
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