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AUIRF3805S-7P
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 160A D2PAK-7
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Inventory: 6366
Minimum: 1
Total Price: USD $24.88
Unit Price: USD $24.8843
≥1 USD $24.8843
≥10 USD $20.41835
≥100 USD $19.77995
≥500 USD $19.1425
≥1000 USD $18.5041
Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins 7
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G6
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 140A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7820pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 130 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 240A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0026Ohm
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 680 mJ
Dimensions
Height 4.55mm
Length 10.35mm
Width 10.05mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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