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IPP60R750E6XKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
CoolMOS? Tube Through Hole N-Channel Mosfet Transistor 5.7A Tc 15.7A 48W Tc 600V
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Inventory: 8222
Minimum: 1
Total Price: USD $5.67
Unit Price: USD $5.66865
≥1 USD $5.66865
≥10 USD $4.6512
≥100 USD $4.50585
≥500 USD $4.3605
≥1000 USD $4.21515
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 48W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170μA
Input Capacitance (Ciss) (Max) @ Vds 373pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.75Ohm
Pulsed Drain Current-Max (IDM) 15.7A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 72 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
No data
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