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IPP60R520E6XKSA1
Infineon TechnologiesRoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
CoolMOS? Tube Through Hole N-Channel Mosfet Transistor 8.1A Tc 8.1A 66W 9ns
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Inventory: 3839
Minimum: 1
Total Price: USD $6.87
Unit Price: USD $6.868746
≥1 USD $6.868746
≥10 USD $6.479946
≥100 USD $6.11316
≥500 USD $5.767134
≥1000 USD $5.440685
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 66W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 66W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 520m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 230μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 512pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8.1A Tc
Gate Charge (Qg) (Max) @ Vgs 23.4nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 8.1A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.52Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 22A
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Dimensions
Height 15.95mm
Length 10.36mm
Width 4.57mm
Alternative Model
No data
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