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NVD5867NLT4G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET NFET 60V 18A 43MOHM
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Inventory: 5679
Minimum: 1
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Technical Details
Supply Chain
Factory Lead Time 48 Weeks
Lifecycle Status LIFETIME (Last Updated: 4 hours ago)
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.3W Ta 43W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.3W
Case Connection DRAIN
Turn On Delay Time 6.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 39m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 12.6 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.4 ns
Turn-Off Delay Time 18.2 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.05Ohm
Pulsed Drain Current-Max (IDM) 85A
DS Breakdown Voltage-Min 60V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 2.38mm
Length 6.73mm
Width 6.22mm
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