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FQD3P50TM-F085
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 500V 2.1A DPAK
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Inventory: 4431
Minimum: 1
Total Price: USD $1.36
Unit Price: USD $1.363055
≥1 USD $1.363055
≥10 USD $1.285892
≥100 USD $1.213118
≥500 USD $1.144448
≥1000 USD $1.079664
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.9 Ω @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.1A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pulsed Drain Current-Max (IDM) 8.4A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 250 mJ
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