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AO3414L
Alpha & Omega Semiconductor Inc.RoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CHANNEL 20V 3A SOT23-3
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Inventory: 8736
Minimum: 1
Total Price: USD $0.03
Unit Price: USD $0.03325
≥1 USD $0.03325
≥500 USD $0.02755
≥1000 USD $0.0266
≥2000 USD $0.02565
≥5000 USD $0.0247
≥10000 USD $0.02185
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code compliant
Pin Count 3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.4W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 62m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 320pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Drain Current-Max (Abs) (ID) 4.2A
Drain-source On Resistance-Max 0.05Ohm
Pulsed Drain Current-Max (IDM) 30A
DS Breakdown Voltage-Min 20V
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