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FQD5N50CTM-WS
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 500V 4A T/R
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Pricing & Ordering
Inventory: 3588
Minimum: 1
Total Price: USD $0.83
Unit Price: USD $0.832572
≥1 USD $0.832572
≥10 USD $0.785445
≥100 USD $0.740988
≥500 USD $0.699034
≥1000 USD $0.659473
Technical Details
Supply Chain
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 625pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 4A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 300 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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