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IPD60R380E6BTMA1
Infineon TechnologiesRoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
CoolMOS? Bulk Surface Mount N-Channel Mosfet Transistor 10.6A Tc 10.6A 83W Tc 8ns
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Inventory: 7695
Minimum: 1
Total Price: USD $8.5
Unit Price: USD $8.498262
≥1 USD $8.498262
≥10 USD $8.017234
≥100 USD $7.563426
≥500 USD $7.135312
≥1000 USD $6.731422
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Technical
Operating Temperature -55°C~155°C TJ
Packaging Bulk
Published 2013
Series CoolMOS?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 10.6A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 210 mJ
FET Feature Super Junction
Alternative Model
No data
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