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IPD60R380E6ATMA2
Infineon TechnologiesRoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET NCH 600V 10.6A TO252
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Inventory: 5333
Minimum: 1
Total Price: USD $0.71
Unit Price: USD $0.711393
≥1 USD $0.711393
≥10 USD $0.67113
≥100 USD $0.633139
≥500 USD $0.597303
≥1000 USD $0.563493
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2008
Series CoolMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 83W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 300μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 10.6A
Max Dual Supply Voltage 600V
Input Capacitance 700pF
FET Feature Super Junction
Rds On Max 380 mΩ
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