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IPB65R125C7ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH TO263-3
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Inventory: 2416
Minimum: 1
Total Price: USD $3.75
Unit Price: USD $3.745096
≥1 USD $3.745096
≥10 USD $3.533109
≥100 USD $3.333122
≥500 USD $3.144455
≥1000 USD $2.966466
Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS? C7
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 101W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id 4V @ 440μA
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 400V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 18A
Drain-source On Resistance-Max 0.125Ohm
Pulsed Drain Current-Max (IDM) 75A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 89 mJ
Compliance
RoHS Status ROHS3 Compliant
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