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IRFH5020TRPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 5.1A 8PQFN
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Inventory: 6505
Minimum: 1
Total Price: USD $1.66
Unit Price: USD $1.65965
≥1 USD $1.65965
≥10 USD $1.36135
≥100 USD $1.31955
≥500 USD $1.2768
≥1000 USD $1.23405
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 55MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.6W Ta 8.3W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 9.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.1A Ta
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Rise Time 7.7 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 5.1A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 43A
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 63A
Avalanche Energy Rating (Eas) 320 mJ
Max Junction Temperature (Tj) 150°C
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.05mm
Length 6mm
Width 5mm
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