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Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 13A 8-PQFN
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Inventory: 7989
Minimum: 1
Total Price: USD $1.19
Unit Price: USD $1.194221
≥1 USD $1.194221
≥10 USD $1.126625
≥100 USD $1.062854
≥500 USD $1.00269
≥1000 USD $0.945931
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 9MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N5
Number of Elements 1
Power Dissipation-Max 3.6W Ta 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.6 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 227 mJ
Nominal Vgs 2 V
Dimensions
Height 838.2μm
Length 5.9944mm
Width 5.0038mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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