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HUF75339P3

Rochester Electronics, LLC
RoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description PWR MOS 55V/75A/0.012 OHMS N-CH TO-220
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Inventory: 3535
Minimum: 1
Total Price: USD $1.23
Unit Price: USD $1.2312
≥1 USD $1.2312
≥10 USD $1.0108
≥100 USD $0.9785
≥500 USD $0.94715
≥1000 USD $0.9158

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Series UltraFET?
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 20V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 70A
Drain-source On Resistance-Max 0.012Ohm
DS Breakdown Voltage-Min 55V

Compliance

RoHS Status Non-RoHS Compliant

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