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RAF040P01TCL
ROHM SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 3-SMD, Flat Lead
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 12V 4A TUMT3
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Inventory: 8464
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.11115
≥1 USD $0.11115
≥500 USD $0.0912
≥1000 USD $0.08835
≥2000 USD $0.0855
≥5000 USD $0.08265
≥10000 USD $0.0741
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 800mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 6V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 37nC @ 4.5V
Rise Time 43ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 240 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) -8V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage -12V
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