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SI4800BDY-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 6.5A 8-SOIC
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Inventory: 8303
Minimum: 1
Total Price: USD $0.2
Unit Price: USD $0.20045
≥1 USD $0.20045
≥10 USD $0.1653
≥100 USD $0.1596
≥500 USD $0.15485
≥1000 USD $0.14915
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.3W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18.5m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 9A
Drain Current-Max (Abs) (ID) 6.5A
DS Breakdown Voltage-Min 30V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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