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DMP6250SE-13
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 2.1A SOT223
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Inventory: 964
Minimum: 1
Total Price: USD $0.68
Unit Price: USD $0.679804
≥1 USD $0.679804
≥10 USD $0.64132
≥100 USD $0.605023
≥500 USD $0.57077
≥1000 USD $0.538473
Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number DMP6250
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.8W Ta 14W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 6.3 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 551pF @ 30V
Current - Continuous Drain (Id) @ 25°C 2.1A Ta
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 10V
Rise Time 10.3 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 39.8 ns
Turn-Off Delay Time 91.4 ns
Continuous Drain Current (ID) 6.1A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage -60V
Avalanche Energy Rating (Eas) 8 mJ
Dimensions
Height 1.65mm
Length 6.55mm
Width 3.55mm
Compliance
RoHS Status ROHS3 Compliant
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